Device simulation of 0.1 mu m gate-length, 77 K operated, ultra-thin film SOI-MOSFETs

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13 January 2003

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

https://doi.org/10.1109/soi.1989.69805

Abstract

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Keywords

This publication has 1 reference indexed in Scilit:

Design and experimental technology for 0.1-µm gate-length low-temperature operation FET's
IEEE Electron Device Letters, 1987