Pulsed-electron-beam annealing of polycrystalline-silicon films
- 1 August 1979
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 35 (3) , 282-285
- https://doi.org/10.1063/1.91072
Abstract
Pulsed‐electron‐beam annealing of moderately‐phosphorus‐doped poly‐silicon films reduces their resistance below that of thermally annealed films under optimum conditions. In heavily doped films, the electron pulse can cause the effective dopant concentration to exceed that corresponding to solid solubility, but the excess dopant does not stay in solution upon subsequent heat treatment.Keywords
This publication has 8 references indexed in Scilit:
- Thin film MOSFET’s fabricated in laser-annealed polycrystalline siliconApplied Physics Letters, 1979
- Resistivity of LPCVD Polycrystalline‐Silicon FilmsJournal of the Electrochemical Society, 1979
- Electron-beam annealing of ion-implantation damage in integrated-circuit devicesJournal of Applied Physics, 1979
- Pulsed-electron-beam annealing of ion-implantation damageJournal of Applied Physics, 1979
- cw laser anneal of polycrystalline silicon: Crystalline structure, electrical propertiesApplied Physics Letters, 1978
- Grain Growth Mechanism of Heavily Phosphorus‐Implanted Polycrystalline SiliconJournal of the Electrochemical Society, 1978
- Physical and electrical properties of laser-annealed ion-implanted siliconApplied Physics Letters, 1978
- Rutherford backscattering study of crystal orientation dependent annealing effects in high-dose antimony implanted siliconApplied Physics B Laser and Optics, 1978