The doping efficiency in amorphous silicon and germanium
- 1 January 1986
- journal article
- letter
- Published by Taylor & Francis in Philosophical Magazine Part B
- Vol. 53 (1) , L15-L21
- https://doi.org/10.1080/13642818608238962
Abstract
The incorporation probability and the doping efficiency of phosphorus, arsenic and boron in glow-discharge-deposited hydrogenated amorphous silicon and germanium have been measured. All dopant-host pairs show the same doping efficiency as a function of the dopant concentration in the deposition plasma, but exhibit considerable scatter as a function of the solid-phase concentration. These results are discussed in the context of existing doping models.Keywords
This publication has 14 references indexed in Scilit:
- Theory of defect formation in the glow-discharge deposition of phosphorus-doped hydrogenated amorphous siliconPhysical Review B, 1985
- Local bonding arrangements of boron in doped hydrogenated amorphous siliconJournal of Applied Physics, 1984
- The incorporation of phosphorus in amorphous siliconJournal of Non-Crystalline Solids, 1983
- Local bonding configuration of phosphorus in doped and compensated amorphous hydrogenated siliconPhysical Review B, 1983
- Doping and the Fermi Energy in Amorphous SiliconPhysical Review Letters, 1982
- Direct measurement of gap-state absorption in hydrogenated amorphous silicon by photothermal deflection spectroscopyPhysical Review B, 1982
- Structure of AmorphousAlloysPhysical Review Letters, 1979
- Coordination of Arsenic Impurities in Amorphous Silicon-Hydrogen AlloysPhysical Review Letters, 1977
- Electronic properties of substitutionally doped amorphous Si and GePhilosophical Magazine, 1976
- Substitutional doping of amorphous siliconSolid State Communications, 1975