Electronic Structure of the √3 × √3-α and 3×3 Periodicities of Sn/Ge(111)
- 7 September 1998
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 81 (10) , 2108-2111
- https://doi.org/10.1103/physrevlett.81.2108
Abstract
Angle-resolved photoemission shows that the and the surfaces have almost identical surface band structures with two dispersive bands, one of which crosses the Fermi level. The close resemblance between the electronic structures strongly points to a common atomic structure which is further supported by the two Sn core-level components observed for both the and the surfaces. The existence of two surface state bands on the surface calls for the reevaluation of the model for Sn/Ge(111) and other related group IV adatom surfaces.
Keywords
This publication has 13 references indexed in Scilit:
- Periodic lattice distortion accompanying the(3×3)charge-density-wave phase of Sn/Ge(111)Physical Review B, 1998
- Strong Correlation Effects in the () Charge Density Wave Phase of Sn/Ge(111)Physical Review Letters, 1997
- Surface Charge Ordering Transition:Phase of Sn/Ge(111)Physical Review Letters, 1997
- Scanning tunneling microscopy of semiconductor surfacesSurface Science Reports, 1996
- Direct observation of a surface charge density waveNature, 1996
- Metal-semiconductor fluctuation in the Sn adatoms in the Si(111)-Sn and Ge(111)-Sn (√3×√3)R30° reconstructionsPhysical Review B, 1995
- Adsorption of tin on the Ge(111)-c(2 × 8) surface studied with scanning tunneling microscopy and photoelectron spectroscopySurface Science, 1995
- Core-level spectroscopy of the clean Si(001) surface: Charge transfer within asymmetric dimers of the 2×1 andc(4×2) reconstructionsPhysical Review Letters, 1992
- Order-disorder transition on Si(001): c(4 × 2) to (2 × 1)Surface Science, 1987
- -Al: An Adatom-Induced ReconstructionPhysical Review Letters, 1984