High-speed ellipsometry of arsenic-implanted Si during cw laser annealing
- 15 April 1985
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 46 (8) , 746-748
- https://doi.org/10.1063/1.95495
Abstract
Ellipsometric study of solid phase epitaxial growth during cw Ar-ion laser annealing in arsenic-implanted Si is reported for the first time. Use of a high-speed microscopic ellipsometer has made it possible to measure growth rates and growth temperature under laser irradiation.Keywords
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