Metalorganic chemical vapor deposition and characterization of the In-As-Sb-Bi material system for infrared detection
- 11 July 1988
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 53 (2) , 142-144
- https://doi.org/10.1063/1.100350
Abstract
We report the first results pertaining to the growth by metalorganic chemical vapor deposition of InSb1−xBix (0.01<x1−x−ySbyBix with 0.5<yx0.99Bi0.01 epitaxial layers show a room‐temperature mobility of 20 215 cm2/V s with a carrier concentration of ND−NA ∼1016 cm−3. A degradation in the surface morphology of the InSb1−xBix and InAsSbBi epitaxial films correspond to an increase in the InBi mole fraction was observed. We attribute this deterioration in surface morphology to the formation of polycrystalline phases of Bi and the growth of metallic bismuth‐antimony crystallites.Keywords
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