Glow-discharge-implanted, thermally annealed, oxide-passivated silicon solar cells of 19% efficiency
- 23 February 1987
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 50 (8) , 469-471
- https://doi.org/10.1063/1.98176
Abstract
Single-crystal silicon solar cells with efficiencies as high as 19.3% AM1.5 have been fabricated using simple, glow-discharge ion implantation followed by conventional furnace annealing during which an oxide layer was grown for surface passivation. Fine-line (∼5 μm) photolithography was used for metallization to reduce carrier recombination at the metal-silicon interface and optimized ZnS/MgF2 antireflection coatings were applied. The efficiencies of these cells are the highest reported to date for ion-implanted cells.Keywords
This publication has 8 references indexed in Scilit:
- 18% efficient intrinsically passivated laser-processed silicon solar cellsApplied Physics Letters, 1987
- Antireflection coatings for planar silicon solar cellsSolar Cells, 1986
- 19.1% efficient silicon solar cellApplied Physics Letters, 1984
- High-efficiency ion-implanted silicon solar cellsIEEE Transactions on Electron Devices, 1984
- High-efficiency Si solar cells by beam processingApplied Physics Letters, 1983
- Laser processing for high-efficiency Si solar cellsJournal of Applied Physics, 1982
- Pulsed-electron-beam annealing of ion-implantation damageJournal of Applied Physics, 1979
- Ion implantation as a production techniqueIEEE Transactions on Electron Devices, 1967