Interface composition control in InAs/GaSb superlattices
- 1 April 1994
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 37 (4-6) , 733-737
- https://doi.org/10.1016/0038-1101(94)90288-7
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Control of interface stoichiometry in InAs/GaSb superlattices grown by molecular beam epitaxyApplied Physics Letters, 1993
- The effect of interface bond type on the structural and optical properties of GaSb/InAs superlatticesSemiconductor Science and Technology, 1993
- Optical analysis of InAs heterostructures grown by migration-enhanced epitaxySemiconductor Science and Technology, 1993
- Microwave performance of a digital alloy barrier Al(Sb,As)/AlSb/InAs heterostructure field-effect transistorIEEE Electron Device Letters, 1993
- Interface studies of InAs/GaSb superlattices by Raman scatteringSurface Science, 1992
- Large temperature changes induced by molecular beam epitaxial growth on radiatively heated substratesApplied Physics Letters, 1992
- Raman scattering from interface modes inSb/InAs superlatticesPhysical Review B, 1992
- Effects of interface stoichiometry on the structural and electronic properties of Ga1−xInxSb/InAs superlatticesJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1992
- Type II superlattices for infrared detectors and devicesSemiconductor Science and Technology, 1991
- Proposal for strained type II superlattice infrared detectorsJournal of Applied Physics, 1987