Optical analysis of InAs heterostructures grown by migration-enhanced epitaxy
- 1 January 1993
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 8 (1S) , S121-S124
- https://doi.org/10.1088/0268-1242/8/1s/027
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- Raman scattering from InAs/AlSb ultrathin-layer superlattices grown by molecular beam epitaxySurface Science, 1992
- Interface studies of InAs/GaSb superlattices by Raman scatteringSurface Science, 1992
- Structural stability of ultrathin InAs/GaAs quantum wells grown by migration enhanced epitaxyJournal of Crystal Growth, 1991
- An InAs channel heterojunction field-effect transistor with high transconductanceIEEE Electron Device Letters, 1990
- Characteristic properties of III–VA/III-VB heterointerfaces grown by molecular beam epitaxyApplied Surface Science, 1990
- Interface and thickness control of polytype heterostructures grown by molecular beam epitaxyApplied Surface Science, 1989
- New negative differential resistance device based on resonant interband tunnelingApplied Physics Letters, 1989
- Negative differential resistance in AlGaSb/InAs single-barrier heterostructures at room temperatureApplied Physics Letters, 1989
- IIA-7 an AlSb/InAs/AlSb quantum well HFTIEEE Transactions on Electron Devices, 1987
- Calculated superlattice and interface phonons of InAs/GaSb superlatticesPhysical Review B, 1986