Interface and thickness control of polytype heterostructures grown by molecular beam epitaxy
- 1 November 1989
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 40 (1-2) , 115-119
- https://doi.org/10.1016/0169-4332(89)90165-7
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Molecular-beam epitaxial growth and interface characteristics of GaAsSb on GaAs substratesJournal of Vacuum Science & Technology B, 1989
- Summary Abstract: Hot-electron transport in the AlSb/InAs/GaSb double heterostructure prepared by molecular-beam epitaxyJournal of Vacuum Science & Technology B, 1988
- Atomic-Scale Structures of Top and Bottom Heterointerfaces in GaAs–AlxGa1-xAs (x=0.2-1) Quantum Wells Prepared by Molecular Beam Epitaxy with Growth InterruptionJapanese Journal of Applied Physics, 1986
- Phase-Locked Epitaxy Using RHEED Intensity OscillationJapanese Journal of Applied Physics, 1984
- GaSbAlSbInAs multi-heterojunctionsPhysica B+C, 1983
- Two-dimensional quantum states in multi-heterostructures of three constituentsSurface Science, 1982
- Polytype Superlattices and Multi-HeterojunctionsJapanese Journal of Applied Physics, 1981
- Influence of an undoped (AlGa)As spacer on mobility enhancement in GaAs-(AlGa)As superlatticesApplied Physics Letters, 1981
- New Set of Tetrahedral Covalent RadiiPhysical Review B, 1970