Structural stability of ultrathin InAs/GaAs quantum wells grown by migration enhanced epitaxy
- 1 May 1991
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 111 (1-4) , 397-401
- https://doi.org/10.1016/0022-0248(91)91008-x
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Thermal processing of strained GaInAs/GaAs high hole mobility transistor structuresApplied Physics Letters, 1990
- Comment on ‘‘Noninteger InAs monolayer well InAs/GaAs single quantum well structures grown by metalorganic chemical vapor deposition’’[Appl. Phys. Lett. 5 3, 495 (1988)]Applied Physics Letters, 1989
- Response to ‘‘Comment on ‘Noninteger InAs monolayer well InAs/GaAs single quantum well structures grown by metalorganic chemical vapor deposition’ ’’ [Appl. Phys. Lett. 5 5, 1689 (1989)]Applied Physics Letters, 1989
- InAs monomolecular plane in GaAs grown by flow-rate modulation epitaxyJournal of Applied Physics, 1989
- Surface Lattice Strain Relaxation at the Initial Stage of Heteroepitaxial Growth of InxGa1-xAs on GaAs by Molecular Beam EpitaxyJapanese Journal of Applied Physics, 1989
- Migration-enhanced epitaxy of GaAs and AlGaAsJournal of Crystal Growth, 1989
- Role of strain and growth conditions on the growth front profile of InxGa1−xAs on GaAs during the pseudomorphic growth regimeApplied Physics Letters, 1988
- High quality ultrathin InAs/GaAs quantum wells grown by standard and low-temperature modulated-fluxes molecular beam epitaxyApplied Physics Letters, 1988
- Noninteger InAs monolayer well InAs/GaAs single quantum well structures grown by metalorganic chemical vapor depositionApplied Physics Letters, 1988
- Ultrathin InAs/GaAs single quantum well structures grown by atomic layer epitaxyApplied Physics Letters, 1986