An InAs channel heterojunction field-effect transistor with high transconductance
- 1 November 1990
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 11 (11) , 526-528
- https://doi.org/10.1109/55.63021
Abstract
A report is presented on an InAs channel field-effect transistor (FET) based on AlGaSb/InAs/AlSb/AlGaSb structures grown by molecular-beam epitaxy. Excellent pinch-off characteristics have been obtained. An FET with a gate length of 1.7 mu m showed transconductances ranging from 460 mS/mm (at V/sub ds/=0.5 V) to 509 mS/mm (at V/sub ds/=1 V) and a K factor of 1450 mS/Vmm (at V/sub ds/=1 V) at room temperature.Keywords
This publication has 10 references indexed in Scilit:
- Effects of interface layer sequencing on the transport properties of InAs/AlSb quantum wells: Evidence for antisite donors at the InAs/AlSb interfaceJournal of Applied Physics, 1990
- Heterojunction field-effect transistors based on AlGaSb/InAsApplied Physics Letters, 1989
- Electron concentrations and mobilities in AlSb/InAs/AlSb quantum wellsJournal of Applied Physics, 1989
- Microwave performance of AlInAs-GaInAs HEMTs with 0.2- and 0.1- mu m gate lengthIEEE Electron Device Letters, 1988
- IIA-6 High performance submicrometer AlInAs-GaInAs HEMT'sIEEE Transactions on Electron Devices, 1987
- IIA-7 an AlSb/InAs/AlSb quantum well HFTIEEE Transactions on Electron Devices, 1987
- Cryogenic operation of pseudomorphic AlGaAs/InGaAs single-quantum-well MODFETsElectronics Letters, 1985
- Analysis of kink characteristics in Silicon-on-insulator MOSFET's using two-carrier modelingIEEE Transactions on Electron Devices, 1985
- Two-dimensional electron gas m.e.s.f.e.t. structureElectronics Letters, 1980
- A New Field-Effect Transistor with Selectively Doped GaAs/n-AlxGa1-xAs HeterojunctionsJapanese Journal of Applied Physics, 1980