Electrical Evaluation of Defects Induced in Silicon by High Energy Boron Ion Implantation
- 1 October 1989
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 28 (10A) , L1673-1675
- https://doi.org/10.1143/jjap.28.l1673
Abstract
The suitable dose and annealing temperature for high energy ion implantation to form a retrograde well or a buried conductive layer for CMOS devices were investigated by studying I-V and C-V characteristics. Boron ions were implanted in Si at 400 and 700 keV with doses ranging from 1×1013 cm-2 to 3×1014 cm-2. It was found that the leakage currents induced by high energy boron implantation at 400 and 700 keV with a dose of less than 3×1013cm-2 could be suppressed at an unimplanted level by annealing at 950°C for 20 minutes.Keywords
This publication has 3 references indexed in Scilit:
- Improvement of CMOS latch-up immunity using a high energy implanted buried layerNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1989
- Proximity gettering with mega-electron-volt carbon and oxygen implantationsApplied Physics Letters, 1988
- High energy ion implantationNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1985