Single-Ended and Differential Ka-Band BiCMOS Phased Array Front-Ends

Abstract
Single-ended and differential phased array front-ends are developed for Ka-band applications using a 0.12 mum SiGe BiCMOS process. The phase shifters are based on CMOS switched delay networks and have 22.5deg phase resolution and 1dB) with a 3rd order intermodulation intercept point (IIP3) of +21 dBm. For the single-ended design, a SiGe low noise amplifier is placed before the CMOS phase shifter, and the LNA/phase shifter results in 11 plusmn 1.5 dB gain and 2 and 350 times 950 mum2, respectively, excluding pads. These chips are competitive with GaAs and InP designs, and are building blocks for low-cost millimeter-wave phased array front-ends based on silicon technology.

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