Reactive ion etching of polycrystalline silicon using SiCl4
- 24 June 1991
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 58 (25) , 2898-2900
- https://doi.org/10.1063/1.104715
Abstract
Reactive ion etching of polycrystalline silicon using SiCl4 was used to etch 70‐nm‐wide structures. The etching mechanism of the process was investigated by using emission spectroscopy. It was found that the principal etchant for polycrystalline silicon is Cl+2.Keywords
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