Pseudomorphic ZnTe/AlSb/GaSb heterostructures by molecular beam epitaxy
- 17 July 1989
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 55 (3) , 268-270
- https://doi.org/10.1063/1.101925
Abstract
A series of pseudomorphic ZnTe/AlSb/GaSb epilayer/epilayer heterostructures, aimed at the realization of novel wide band-gap light-emitting devices, was grown by molecular beam epitaxy. The structures were evaluated by several techniques including transmission electron microscopy (TEM), x-ray rocking curves, photoluminescence (PL), and Raman spectroscopy. Reflection high-energy electron diffraction intensity oscillations were observed during nucleation of ZnTe. The presence of dislocation-free pseudomorphic structures was confirmed by TEM. The PL spectra of ZnTe epilayers showed dominant near-band-edge features composed of free and shallow impurity bound excitons.Keywords
This publication has 13 references indexed in Scilit:
- Low interface state density at an epitaxial ZnSe/epitaxial GaAs interfaceApplied Physics Letters, 1989
- Proposal of a new visible light emitting structure: n-AlSb/p-ZnTe heterojunctionsJournal of Vacuum Science & Technology B, 1988
- Pseudomorphic ZnSe/n-GaAs doped-channel field-effect transistors by interrupted molecular beam epitaxyApplied Physics Letters, 1988
- Electric field induced shifts in exciton luminescence in ZnSe/(Zn,Mn)Se superlatticesApplied Physics Letters, 1987
- Nucleation and characterization of pseudomorphic ZnSe grown on molecular beam epitaxially grown GaAs epilayersApplied Physics Letters, 1987
- Tight-binding theory of heterojunction band lineups and interface dipolesJournal of Vacuum Science & Technology B, 1986
- Reflection high-energy electron diffraction studies on the molecular-beam-epitaxial growth of AISb, GaSb, InAs, InAsSb, and GaInAsSb on GaSbJournal of Applied Physics, 1985
- Excitonic Surface Polaritons in Luminescence from ZnTe CrystalsPhysica Status Solidi (b), 1984
- Molecular beam epitaxy of AlSbApplied Physics Letters, 1982
- Electrical and optical properties of ZnTe-GaSb heterojunctionsSolid-State Electronics, 1971