Reflection high-energy electron diffraction studies on the molecular-beam-epitaxial growth of AISb, GaSb, InAs, InAsSb, and GaInAsSb on GaSb

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Abstract
The quality of materials grown by molecular-beam epitaxy (MBE) is closely related to the surfaces kinetics in which the surface reconstructions, growth temperatures and molecular species play important roles. We present our studies on the MBE growth conditions, surface reconstructions and surface morphologies of A1Sb, GaSb, and InAs grown on (100) GaSb, and of InAsSb and GaInAsSb lattice matched to GaSb using dimers As2 and Sb2 in a wide temperature range of ∼400–650 °C. Certain surface reconstructions for GaSb and InAs which have not been reported in the literature are identified, and the conditions for their existence are presented.