Noise and small-signal performance of three differentmonolithic InP-based 10 Gbit/sphotoreceiver OEICs
- 24 November 1994
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 30 (24) , 2070-2072
- https://doi.org/10.1049/el:19941397
Abstract
Three circuit concepts (high impedance, common gate, and transimpedance) for a 10 Gbit/s monolithic receiver OEIC consisting of an InGaAs/InP pin photodiode and InAlAs/InGaAs/InP HEMTs are compared in terms of noise and small-signal performance using on-wafer measurements. A total equivalent input noise current of 13.5 pA/√Hz within the bandwidth of the transimpedance circuit is the lowest value ever reported for a monolithic InP-based 10 Gbit/s receiver OEIC.Keywords
This publication has 1 reference indexed in Scilit:
- A 10 Gb/s high sensitivity, monolithically integrated p-i-n-HEMT optical receiverIEEE Photonics Technology Letters, 1993