Improved quality of CuGaSe2 and CuAlSe2 epilayers grown on CuGa0.96In0.04Se2 substrates
- 28 July 1997
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 71 (4) , 533-535
- https://doi.org/10.1063/1.119600
Abstract
Nearly strain free CuGaSe 2 and CuAlSe 2 thin films were successfully grown by metalorganic vapor phase epitaxy on CuGa 0.96 In 0.04 Se 2 substrates prepared by the traveling heater method (THM). CuAlSe 2 (112) epilayers exhibited fine surface structures which reflected the crystal geometry. The CuGaSe 2 epilayers exhibited intense near-band-edge emission even at room temperature. THM-grown single crystals were demonstrated to be a suitable substrates for epitaxy of chalcopyrite compounds.Keywords
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