Deep level transient spectroscopy in Hg1−xCdxTe
- 31 December 1980
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 36 (9) , 809-812
- https://doi.org/10.1016/0038-1098(80)90017-4
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
- Minority-carrier-lifetime determination in Hg0.68Cd0.32TeJournal of Applied Physics, 1978
- The effect of annealing temperature on the carrier concentration OF Hg0.6Cd0.4TeJournal of Electronic Materials, 1978
- Admittance spectroscopy of impurity levels in Schottky barriersJournal of Applied Physics, 1975
- Fast capacitance transient appartus: Application to ZnO and O centers in GaP p-n junctionsJournal of Applied Physics, 1974
- The Three-Dimensional Poole-Frenkel EffectJournal of Applied Physics, 1968
- Cascade Capture of Electrons in SolidsPhysical Review B, 1960
- Switching Time in Junction Diodes and Junction TransistorsProceedings of the IRE, 1954
- Statistics of the Recombinations of Holes and ElectronsPhysical Review B, 1952