Thermal quenching of the photoluminescence of InGaAs/GaAs and InGaAs/AlGaAs strained-layer quantum wells
- 5 November 1990
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 57 (19) , 1986-1988
- https://doi.org/10.1063/1.103987
Abstract
Photoluminescence in InGaAs/GaAs strained‐layer quantum wells is strongly quenched by temperatures above 10–100 K, depending on the well width. Analysis of this dependence shows that the quenching mechanism is thermal activation of electron‐hole pairs from the wells into the GaAs barriers, followed by nonradiative recombination through a loss mechanism in bulk GaAs. The addition of Al to the barriers to improve confinement eliminates loss through this route but introduces another loss mechanism, characterized by an activation energy independent of well width and with a smaller pre‐exponential factor.Keywords
This publication has 5 references indexed in Scilit:
- Valence band engineering in strained-layer structuresSemiconductor Science and Technology, 1989
- Photoluminescence characterisation of InGaAs/GaAs quantum well structuresSemiconductor Science and Technology, 1988
- Photoluminescence study on undoped single quantum well pseudomorphic structuresApplied Physics Letters, 1988
- The temperature dependence of the main photoluminescence half-width and intensity in Al0.28Ga0.72AsSemiconductor Science and Technology, 1986
- Optical Properties of Pseudomorphic InxGa1−xAs Quantum WellsMRS Proceedings, 1986