Photoluminescence study on undoped single quantum well pseudomorphic structures

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Abstract
In this letter, photoluminescence results obtained from two different undoped multilayered pseudomorphic structures grown by molecular beam epitaxy are compared. Intense and spectrally narrow emission was observed from both GaAs/InxGa1−xAs/GaAs and AlxGa1−xAs/InxGa1−xAs/GaAs structures. Excitonic emission from the quantum wells was confirmed by measurements of photoluminescence excitation spectra. The intensity and temperature dependences of the photoluminescence also revealed emission arising from bound excitons and impurities in the quantum wells. Intrinsic and extrinsic emission from confined levels was confirmed by the recorded photoluminescence excitation spectra along with intensity and temperature dependences. In the asymmetric AlxGa1−xAs/InxGa1−xAs/GaAs structure large changes were observed in the photoluminescence intensity under continuous optical excitation which are caused by the optical excitation of defects in the ternary AlxGa1−xAs on top of the pseudomorphically grown InxGa1−xAs.