Study of the optical properties of (100) and (111) oriented GaInAs/GaAs strained-layer superlattices

This publication has 16 references indexed in Scilit:

• Growth of GaAs, AlGaAs, and InGaAs on (111)B GaAs by molecular-beam epitaxy
  Journal of Vacuum Science & Technology B, 1988
• Variation of the critical layer thickness with In content in strained InxGa1−xAs-GaAs quantum wells grown by molecular beam epitaxy
  Applied Physics Letters, 1987
• Optical properties of strained-layer superlattices with growth axis along [111]
  Physical Review Letters, 1987
• Electronic structure of [001]- and [111]-growth-axis semiconductor superlattices
  Physical Review B, 1987
• Theoretical calculations of heterojunction discontinuities in the Si/Ge system
  Physical Review B, 1986
• k⋅p theory of semiconductor superlattice electronic structure. II. Application to ${\mathrm{Ga}}_{1\mathrm{-}\mathrm{x}}$${\mathrm{In}}_{\mathrm{x}}$As-${\mathrm{Al}}_{1\mathrm{-}\mathrm{y}}$${\mathrm{In}}_{\mathrm{y}}$As [100] superlattices
  Physical Review B, 1986
• k⋅ptheory of semiconductor superlattice electronic structure. I. Formal results
  Physical Review B, 1986
• Strain-generated electric fields in [111] growth axis strained-layer superlattices
  Solid State Communications, 1986
• Acceptor spectra of ${\mathrm{Al}}_{\mathrm{x}}$${\mathrm{Ga}}_{1\mathrm{-}\mathrm{x}}$As-GaAs quantum wells in external fields: Electric, magnetic, and uniaxial stress
  Physical Review B, 1985
• Dependence of critical layer thickness on strain for InxGa1−xAs/GaAs strained-layer superlattices
  Applied Physics Letters, 1985