Luminescence efficiency measurements of silicon nanoclusters
- 27 July 1998
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 73 (4) , 523-525
- https://doi.org/10.1063/1.121921
Abstract
We present the results of what we believe to be the first study of the power efficiency of room temperature photoluminescence from thin films of silica containing silicon nanoclusters. Films were prepared by plasma enhanced chemical vapor deposition from silane and nitrous oxide precursors. Luminescence was excited using the 476 nm line of an argon-ion laser. We have measured power efficiencies for samples that exhibit luminescence solely due to radiative recombination of quantum confined excitons. Efficiencies around 0.04% are reported.Keywords
This publication has 16 references indexed in Scilit:
- Encapsulated nanocrystals and quantum dots formed by ion beam synthesisNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1997
- Electronic and mechanical properties of nanocrystalline composites when approaching molecular sizeThin Solid Films, 1997
- Fabrication of silicon nanocrystallites by oxidation/annealing of polysilane films and their luminescence propertiesThin Solid Films, 1997
- Optical and structural characterization of implanted nanocrystalline semiconductorsNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1997
- Manufacture and Characterization of Nanocomposite Thin Films of Si-SiO2 and Ag-SiMaterials Science Forum, 1996
- The origin of photoluminescence from thin films of silicon-rich silicaJournal of Applied Physics, 1996
- Effect of different preparation conditions on light emission from silicon implanted SiO2 layersJournal of Applied Physics, 1996
- Visible photoluminescence in Si+-implanted silica glassJournal of Applied Physics, 1994
- Control of and Mechanisms for Room Temperature Visible light Emission from Silicon Nanostructures in SiO2 formed by Si+ Ion ImplantationMRS Proceedings, 1994
- Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafersApplied Physics Letters, 1990