Cross-sectional transmission electron microscope observation of step-band formation on GexSi1−x(111) vicinal surfaces
- 29 September 1986
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 49 (13) , 776-778
- https://doi.org/10.1063/1.97544
Abstract
The Ge0.1Si0.9 surface and the Ge0.1Si0.9/Si interface on the Si(111) 4° off substrate were observed by a cross‐sectional transmission electron microscope. The Ge0.1Si0.9 surface grown at 750 °C was composed of alternate planes of (111) terraces and step bands, whose widths in the 〈112〉 direction were about 450 and 150 Å, respectively. A step band was formed by steps several monolayers high. On the other hand, the Ge0.1Si0.9/Si interface was very flat and the step bands were not formed in the Si on Si homoepitaxy process at 750 °C.Keywords
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