n-channel ion-implanted enhancement/depletion FET circuit and fabrication technology
- 1 June 1973
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 8 (3) , 226-230
- https://doi.org/10.1109/jssc.1973.1050379
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- A high-performance N-channel MOSLSI using depletion-type load elementsIEEE Journal of Solid-State Circuits, 1972
- Ion-implanted complementary MOS transistors in low-voltage circuitsIEEE Journal of Solid-State Circuits, 1972
- Ion implantation in semiconductors—Part I: Range distribution theory and experimentsProceedings of the IEEE, 1968