A reactive sputtering method for preparation of berthollide type of iron oxide films
- 1 March 1982
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 53 (3) , 2748-2750
- https://doi.org/10.1063/1.330955
Abstract
In order to prepare berthollide type of iron oxide (i.e., nonstoichiometric magnetite; FeOx:1.34<×−3 Torr by using a high rate sputtering apparatus with faced targets. The composition and crystal structure of the obtained films strongly depend on input power Pt and substrate temperature T2. The increase of Pt and Ts lead to the reduction of oxygen content in the films. The films deposited at Pt above 300 W and Ts of 200 °C exhibit a spinel type of crystal structure. Their lattice constant a0 and resistivity ρ change monotonically from a0 and ρ for γ‐Fe2O3 to those for Fe3O4 with an increase of Pt from 300 to 800 W. On the other hand, when Pt is kept constant at 300 W, berthollide type of iron oxide films was deposited at Ts of 220–270 °C. The optical spectra of glow discharge reveal the existence of a large amount of ionic species such as H+ and OH+ in the space between targets. They seem to be effective for the formation of the berthollide type of iron oxide.This publication has 4 references indexed in Scilit:
- Magnetic recording characteristics of sputtered γ-Fe2O3thin flim disksIEEE Transactions on Magnetics, 1979
- Deposition of magnetite films by reactive sputtering of ironIEEE Transactions on Magnetics, 1976
- Ferrite thin films for high recording densityIEEE Transactions on Magnetics, 1975
- Reactive sputtering of metals in oxidizing atmospheresThin Solid Films, 1973