Deep level profiles at substrate-epitaxial interfaces in gallium phosphide
- 31 December 1978
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 21 (11-12) , 1513-1517
- https://doi.org/10.1016/0038-1101(78)90234-4
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- Solution growth of gallium phosphide p-n junctions by liquid phase epitaxyJournal of Crystal Growth, 1972
- Determination of optical ionization cross sections in GaP using charge storage and impurity photovoltaic effectSolid-State Electronics, 1971
- Absorption Spectrum of Nickel in Gallium PhosphidePhysical Review B, 1968
- Redistribution of Diffused Boron in Silicon by Thermal OxidationJapanese Journal of Applied Physics, 1964