Defects in Superlattices Under Pressure
- 1 January 1986
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Picosecond determination of the dielectric function of liquid silicon at 1064 nmSolid State Communications, 1987
- The Origin of the DX Center in AlxGa1-xAsJapanese Journal of Applied Physics, 1986
- Pressure dependence of GaAs/AlxGa1−xAs quantum-well bound states: The determination of valence-band offsetsJournal of Vacuum Science & Technology B, 1986
- Deep donor model for the persistent photoconductivity effectApplied Physics Letters, 1986
- Direct Evidence for the DX Center Being a Substitutional Donor in AlGaAs Alloy SystemJapanese Journal of Applied Physics, 1985
- A Semi-empirical tight-binding theory of the electronic structure of semiconductors†Journal of Physics and Chemistry of Solids, 1983
- Pressure dependence of deep levels in GaAsPhysical Review B, 1982
- Theory of Substitutional Deep Traps in Covalent SemiconductorsPhysical Review Letters, 1980
- Large-Lattice-Relaxation Model for Persistent Photoconductivity in Compound SemiconductorsPhysical Review Letters, 1977
- Special Points in the Brillouin ZonePhysical Review B, 1973