Characteristics of polycrystalline silicon integrated circuits
- 1 June 1976
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 35 (2) , 149-153
- https://doi.org/10.1016/0040-6090(76)90250-9
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Radiation sensitivity and amorphous materials-present and futureReports on Progress in Physics, 1974
- Vacuum Deposited Silicon Devices on Fused Silica SubstratesJournal of the Electrochemical Society, 1974
- Structure of chemically deposited polycrystalline-silicon filmsThin Solid Films, 1973
- Growth and Characterization of Polycrystalline SiliconJournal of the Electrochemical Society, 1973
- Pn junctions in polycristalline-silicon filmsSolid-State Electronics, 1972
- Field-effects in polycrystalline-silicon filmsSolid-State Electronics, 1972
- Effects of thermal-neutron irradiation on amorphous-silicon filmsJournal of Non-Crystalline Solids, 1972
- Diffusion of Impurities in Polycrystalline SiliconJournal of Applied Physics, 1972
- Hall Mobility in Chemically Deposited Polycrystalline SiliconJournal of Applied Physics, 1971
- The poly-silicon insulated-gate field-effect transistorIEEE Transactions on Electron Devices, 1966