Optical properties of epitaxialon Si from 0.062 to 22.3 eV
- 15 February 1993
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 47 (8) , 4356-4362
- https://doi.org/10.1103/physrevb.47.4356
Abstract
The optical constants of epitaxial films on Si from 0.062 to 22.3 eV have been determined by ellipsometry and reflectance measurements. The energy dependencies of the dielectric functions show Drude behavior at energies lower than ∼0.2 eV with Drude parameters ħ=(5.8±0.2) eV and ħ/τ=(0.09±0.02) eV. The energy-loss function, calculated from the optical constants, shows two peaks that correspond to the screened plasma oscillation and volume plasma oscillation of all valence electrons. Using the measured optical constants, a composite thin film of epitaxial particles embedded in Si is shown to have the absorptance peak due to a surface-plasmon resonance in the particles. The peak shifts to higher energy as the ellipsoidal particles become more elongated, in good agreement with recent observations by Fathauer et al. [Phys. Rev. B 44, 1345 (1991)].
Keywords
This publication has 18 references indexed in Scilit:
- Ellipsometric measurements of the CoSi2 formation from very thin cobalt films on siliconJournal of Applied Physics, 1992
- Optical properties of epitaxial CoSi2/Si and CoSi2 particles in Si from 0.062 to 2.76 eVJournal of Applied Physics, 1992
- Controllable surface-plasmon resonance in engineered nanometer epitaxial silicide particles embedded in siliconPhysical Review B, 1991
- Infrared response from metallic particles embedded in a single-crystal Si matrix: The layered internal photoemission sensorApplied Physics Letters, 1990
- Near-infrared optical properties of CoSi2 thin filmsJournal of Applied Physics, 1990
- Growth of CoSi2 on Si(001): Structure, defects, and resistivityJournal of Vacuum Science & Technology A, 1990
- Optical constants of thin CoSi2 films on siliconApplied Physics A, 1990
- Optical properties of epitaxial CoSi2 and NiSi2 films on siliconJournal of Applied Physics, 1989
- The measurement of effective complex refractive indices for selected metal silicidesJournal of Applied Physics, 1986
- Transistor action in Si/CoSi2/Si heterostructuresApplied Physics Letters, 1985