Reflectance of multilayer amorphous semiconductor films with random thickness layers

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Abstract
Reflectance and transmittance spectra of amorphous semiconductor multilayer films were computed for layers of random thickness. This choice was prompted by the experimental results recently reported on hydrogenated amorphous silicon/silicon-nitride films in which the thickness of the lower bandgap material layers is randomly chosen. The calculation clearly elucidates the origin of a peculiar behaviour of the reflectivity observed in the spectral region of strong absorption.