Piezoelectric DMOS strain transducers
- 1 November 1976
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 29 (9) , 521-522
- https://doi.org/10.1063/1.89169
Abstract
High‐frequency strain transducers consisting of n‐channel piezoelectric DMOS transistors have been constructed. These transducers have detected surface acoustic waves at 20 and 28 MHz. The transducers exhibit gauge factors of the order of 105 at dc.Keywords
This publication has 4 references indexed in Scilit:
- VI-4 piezoelectric diffused MOS (PI-DMOS) transistor as strain transducerIEEE Transactions on Electron Devices, 1975
- Acoustic-Wave Detection via a Piezoelectric Field-Effect TransducerApplied Physics Letters, 1972
- D-MOS transistor for microwave applicationsIEEE Transactions on Electron Devices, 1972
- A metal-insulator-piezoelectric semiconductor electromechanical transducerIEEE Transactions on Electron Devices, 1965