Mass-spectrometer-controlled fabrication of Si/Ge superlattices
- 21 March 1988
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 52 (12) , 1005-1007
- https://doi.org/10.1063/1.99227
Abstract
We have used a quadrupole mass spectrometer to control deposition rates during fabrication of compositionally modulated Si/Ge superlattices. Its performance has been evaluated by an x-ray diffraction study of a superlattice. The variation of the Si deposition rate was less than 3% during the whole deposition time of 30 min. This proves that a mass spectrometer can be successfully employed as rate monitor in Si molecular beam epitaxy systems.Keywords
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