On the mechanism of sputtering of SiO2 by Ar at ion energies near the sputtering threshold
- 1 January 1989
- Vol. 39 (11-12) , 1101-1103
- https://doi.org/10.1016/0042-207x(89)91099-3
Abstract
No abstract availableThis publication has 15 references indexed in Scilit:
- Computer studies of the reflection of light ions from solidsPublished by Elsevier ,2002
- A model for the oxidation of silicon by high dose oxygen implantationThin Solid Films, 1985
- Computer simulation of preferential sputteringNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1985
- On the role of Gibbsian segregation in causing preferential sputteringSurface and Interface Analysis, 1985
- Sputtering studies with the Monte Carlo Program TRIM.SPApplied Physics A, 1984
- Tridyn — A TRIM simulation code including dynamic composition changesNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1984
- Low Energy Ion Beam EtchingJournal of the Electrochemical Society, 1981
- Ion-surface interactions in plasma etchingJournal of Applied Physics, 1977
- Computer simulation of atomic-displacement cascades in solids in the binary-collision approximationPhysical Review B, 1974
- Theory of Sputtering. I. Sputtering Yield of Amorphous and Polycrystalline TargetsPhysical Review B, 1969