Effect of ramp rates during rapid thermal annealing of ion implanted boron for formation of ultra-shallow junctions
- 1 December 1999
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 28 (12) , 1333-1339
- https://doi.org/10.1007/s11664-999-0118-7
Abstract
No abstract availableKeywords
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