Ultra-shallow junction formation by spike annealing in a lamp-based or hot-walled rapid thermal annealing system: effect of ramp-up rate
- 1 December 1998
- journal article
- Published by Elsevier in Materials Science in Semiconductor Processing
- Vol. 1 (3-4) , 237-241
- https://doi.org/10.1016/s1369-8001(98)00030-4
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
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