Boron Implanted Shallow Junction Formation By High-temperature/ Short-time/high-ramping-rate(400/spl deg/C/sec) RTA

Publisher Website

1 January 1997

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

p. 89-90
https://doi.org/10.1109/vlsit.1997.623709

Abstract

No abstract available

Keywords

This publication has 1 reference indexed in Scilit:

The effects of boron penetration on p/sup +/ polysilicon gated PMOS devices
IEEE Transactions on Electron Devices, 1990