1.3-μm GaInNAs-AlGaAs distributed feedback lasers
- 1 March 2000
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 12 (3) , 239-241
- https://doi.org/10.1109/68.826900
Abstract
Room temperature continuous-wave operation of 1.3-/spl mu/m single-mode GaInNAs-AlGaAs distributed feedback (DFB)-lasers has been realized. The laser structure has been grown by solid source molecular beam epitaxy (MBE) using an electron cyclotron resonance plasma source for nitrogen activation (ECR-MBE). Laterally to the laser ridge a metal grating is patterned in order to obtain DFB. The evanescent field of the laser mode couples to the grating resulting in single-mode DFB emission. The continuous wave threshold currents are around 120 mA for a cavity with 800-/spl mu/m length and 2 /spl mu/m width. Monomode emission with side-mode suppression ratios of nearly 40 dB have been obtained.Keywords
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