Phenomenological modeling of plasma generation for real-time control of RIE systems
- 17 December 2002
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Electrical characterization of radio-frequency discharges in the Gaseous Electronics Conference Reference CellJournal of Vacuum Science & Technology A, 1992
- Measurement of electron densities by a microwave cavity method in 13.56-MHz RF plasmas of Ar, CF4, C2F6, and CHF3Plasma Chemistry and Plasma Processing, 1991
- Smooth plasma-sheath transition in a hydrodynamic modelIEEE Transactions on Plasma Science, 1990
- Macroscopic modeling of radio-frequency plasma dischargesJournal of Vacuum Science & Technology A, 1989
- A plasma etching model based on a generalized transport approachJournal of Applied Physics, 1987
- A model for the etching of Si in CF4 plasmas: Comparison with experimental measurementsPlasma Chemistry and Plasma Processing, 1986