Calculation and interpretation of the electronic properties of superlattices
- 15 April 1989
- journal article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 39 (12) , 8483-8487
- https://doi.org/10.1103/physrevb.39.8483
Abstract
A new method is proposed for the calculation of the electronic properties of superlattices. The method is based on a similarity transformation separating the Hamiltonian into an average-crystal part and a part describing the superlattice effects. The second part is treated by perturbation theory, leading to a significant reduction of the dimensions of the Hamiltonian. Moreover, the method provides an easy interpretation of the results. Application is made for the GaSb/InAs superlattices, and the confinement and folding effects are discussed.Keywords
This publication has 15 references indexed in Scilit:
- Γ-X mixing in GaAs/As and As/AlAs superlatticesPhysical Review B, 1987
- Folding effects in GaAs-AlAs superlatticesPhysical Review B, 1987
- Effects of alloying and hydrostatic pressure on electronic and optical properties of GaAs-Al_{x}Ga_{1-x}As superlattices and multiple-quantum-well structuresPhysical Review B, 1987
- Electronic structure of [001]- and [111]-growth-axis semiconductor superlatticesPhysical Review B, 1987
- Self-consistent energy bands and formation energy of the (GaAs(AlAs(001) superlatticePhysical Review B, 1986
- Zone folding, morphogenesis of charge densities, and the role of periodicity in GaAs-As (001) superlatticesPhysical Review B, 1986
- Confined electron states in GaAs-Ga1-xAlxAs (0.2⩽x⩽1.0) superlatticesJournal of Physics C: Solid State Physics, 1986
- Raman resonance onedges in superlatticesPhysical Review B, 1985
- Band mixing in semiconductor superlatticesPhysical Review B, 1985
- InAs-GaSb superlattice energy structure and its semiconductor-semimetal transitionPhysical Review B, 1978