Structural fluctuation of SiO2 network at the interface with Si
- 1 July 1996
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 100-101, 268-271
- https://doi.org/10.1016/0169-4332(96)00302-9
Abstract
No abstract availableKeywords
This publication has 21 references indexed in Scilit:
- Analysis of infrared attenuated total reflection spectra from thin SiO2 films on SiJournal of Applied Physics, 1995
- Relationship between stress and dangling bond generation at the (111)Si/interfacePhysical Review Letters, 1993
- Spectroscopic immersion ellipsometry study of the mechanism of Si/SiO2 interface annealingJournal of Vacuum Science & Technology A, 1992
- An Interface Enhanced Spectroscopic Ellipsometry Technique: Application to Si ‐ SiO2Journal of the Electrochemical Society, 1992
- Silicon-silicon dioxide interface: An infrared studyJournal of Applied Physics, 1987
- Low-temperature growth of silicon dioxide films: A study of chemical bonding by ellipsometry and infrared spectroscopyJournal of Vacuum Science & Technology B, 1987
- A Viscous Flow Model to Explain the Appearance of High Density Thermal SiO2 at Low Oxidation TemperaturesJournal of the Electrochemical Society, 1982
- Index of Refraction of Steam Grown Oxides on SiliconJournal of the Electrochemical Society, 1980
- The Optical Constants of Silicon and Dry Oxygen Oxides of Silicon at 5461AJournal of the Electrochemical Society, 1978
- Comparison of properties of dielectric films deposited by various methodsJournal of Vacuum Science and Technology, 1977