Donor-Acceptor Pair as Opposed to Anion Antisite Metastability in Bulk Semi-Insulating GaAs: Electron Paramagnetic Resonance and Photoconductivity Data Analysis

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Abstract
We show that the time evolution of the paramagnetic signals and photoconductivity in the same semi-insulating GaAs material during illumination below the band gap at low temperature can both be analyzed within a charge transfer model. This model involves the formation of metastable donor-acceptor pairs due to free carrier trapping by initially ionized defects. This result again questions whether the common link between EL2 and the AsGa-related defects needs a configuration-related metastability.