Effect of Low-Level Boron Doping on Transport Properties of a-Si:H and a-SiGe:H Alloys
- 1 January 1989
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
Large simultaneous changes in ambipolar diffusion length and d.c. photoconductivity are observed with boron doping below 5ppm. We show that the observation can be explained successfully with a model for the doping effect, which is also consistent with earlier studies. The μτ products for both carriers as a function of doping are determined. The light intensity dependence of diffusion length and photoconductivity is also discussed.Keywords
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