Barrier height reduction for graded n-n heterojunctions
- 1 March 1977
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 48 (3) , 1359-1360
- https://doi.org/10.1063/1.323731
Abstract
We have obtained an expression for the critical grading length which reduces the barrier height from the abrupt junction value to 1kT for a linearly graded, uniformly doped, n‐n heterojunction. This critical length, which is temperature dependent, is the product of the extrinsic Debye length and the abrupt junction barrier height normalized to kT.This publication has 5 references indexed in Scilit:
- Problems in the theory of heterojunction discontinuitiesC R C Critical Reviews in Solid State Sciences, 1975
- A simplified model for graded-gap heterojunctionsSolid-State Electronics, 1975
- The graded-gap Alx Ga1 − x As–GaAs heterojunctionJournal of Applied Physics, 1972
- n-n Semiconductor heterojunctionsSolid-State Electronics, 1963
- Experiments on Ge-GaAs heterojunctionsSolid-State Electronics, 1962