The oxidation of titanium silicide
- 1 November 1990
- journal article
- research article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 19 (11) , 1193-1199
- https://doi.org/10.1007/bf02673332
Abstract
No abstract availableKeywords
This publication has 24 references indexed in Scilit:
- Kinetics of titanium silicide formation on single-crystal Si: Experiment and modelingJournal of Applied Physics, 1988
- Titanium silicides formed by rapid thermal vacuum processingJournal of Applied Physics, 1988
- Nucleation of a new phase from the interaction of two adjacent phases: Some silicidesJournal of Materials Research, 1988
- I n s i t u investigation of TiN formation on top of TiSi2Journal of Vacuum Science & Technology B, 1988
- Self-aligned titanium silicide device technology by NH3 plasma assisted thermal annealingJournal of Vacuum Science & Technology B, 1987
- A Solid State Amorphisation Reaction in Ti-Si Diffusion Couples: The Phase FieldMRS Proceedings, 1987
- Kinetics of formation of silicides: A reviewJournal of Materials Research, 1986
- Metastable phase formation in titanium-silicon thin filmsJournal of Applied Physics, 1985
- The Effect of Oxygen in Cosputtered (Titanium + Silicon) FilmsMRS Proceedings, 1982
- Thin film interaction between titanium and polycrystalline siliconJournal of Applied Physics, 1980