Exchange of Bonded Hydrogen in Amorphous Silicon by Deuterium
- 1 January 1986
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
We show that bonded hydrogen in a-Si:H is readily exchanged by atomic deuterium when exposed to a deuterium plasma discharge. The effective diffusion coefficient for the D.H exchange, 10∼14 cnr/sec at 160°C, is comparable to that of interstitial hydrogen in c-Si.Keywords
This publication has 2 references indexed in Scilit:
- A SIMS analysis of deuterium diffusion in hydrogenated amorphous siliconApplied Physics Letters, 1978
- Infrared and Raman spectra of the silicon-hydrogen bonds in amorphous silicon prepared by glow discharge and sputteringPhysical Review B, 1977