Determination of trapped oxide charge in flash EPROMs and MOSFETs with thin oxides
- 1 August 1992
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 13 (8) , 439-441
- https://doi.org/10.1109/55.192784
Abstract
A technique for determining the sign and the effective density of the trapped oxide charge near the junction transition region, based on the measurement of the gate-induced drain leakage (GIDL) current, is used to investigate the hot-carrier effects resulting from the erase operation and bit-line stress in flash EPROM devices. While the trapped oxide charge depends on the stress conditions, it has been found that a significant amount of hole trapping is likely when a sufficiently large potential difference exists between the gate and junction for either an abrupt or graded junction.Keywords
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