Diffusion photovoltage in poly(p -phenylenevinylene)
- 15 April 2001
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 89 (8) , 4410-4412
- https://doi.org/10.1063/1.1355721
Abstract
Photovoltage phenomena in poly(p-phenylenevinylene) (PPV) are investigated under pulsed laser illumination. The photovoltage transients are strongly retarded in time depending on sample thickness, laser intensity, and bias illumination. It is shown that the photovoltage in PPV originates from separation of excess electrons and holes due to their concentration gradient and different diffusion coefficients (diffusion photovoltage). The diffusion coefficient of excess holes is found to be on the order of and it increases with increasing excitation intensity and intensity of bias illumination. The diffusion coefficient of excess electrons is about 1–2 orders of magnitude smaller than for excess holes.
This publication has 13 references indexed in Scilit:
- Surface photovoltage phenomena: theory, experiment, and applicationsSurface Science Reports, 1999
- Investigation of the photovoltage in por-Si/p-Si structures by the pulsed-photovoltage methodSemiconductors, 1998
- Investigation of Electronic Properties of Porous Silicon by the Pulsed Surface Photovoltage TechniqueMRS Proceedings, 1994
- Light-emitting diodes from partially conjugated poly(p-phenylene vinylene)Journal of Applied Physics, 1993
- Light-emitting diodes based on conjugated polymersNature, 1990
- Determination of surface states on Si(111) by surface photovoltage spectroscopyPhysical Review B, 1980
- Investigation of energetic surface state distributions at real surfaces of silicon after treatment with HF and H2O using large-signal photovoltage pulsesJournal of Physics D: Applied Physics, 1979
- Determination of surface properties by means of large signal photovoltage pulses and the influence of trappingSurface Science, 1974
- Surface-state density and surface potential in MIS capacitors by surface photovoltage measurements. IJournal of Physics D: Applied Physics, 1971
- Large-Signal Surface Photovoltage Studies with GermaniumPhysical Review B, 1958