Investigation of Electronic Properties of Porous Silicon by the Pulsed Surface Photovoltage Technique
- 1 January 1994
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Influence of H2O atmosphere on the photoluminescence of HF-passivated porous siliconJournal of Applied Physics, 1994
- Correlation between photoluminescence and surface species in porous silicon: Low-temperature annealingApplied Physics Letters, 1994
- Blue emission in porous silicon: Oxygen-related photoluminescencePhysical Review B, 1994
- Adsorbate effects on photoluminescence and electrical conductivity of porous siliconApplied Physics Letters, 1994
- Fast and slow visible luminescence bands of oxidized porous SiApplied Physics Letters, 1994
- Simultaneous Determination of Surface Potential and Excess Carrier Concentration with the Pulsed Surface Photovoltage MethodPhysica Status Solidi (a), 1993
- Models and Mechanisms for the Luminescence of Porous SiMRS Proceedings, 1993
- Rapid-thermal-oxidized porous Si−The superior photoluminescent SiApplied Physics Letters, 1992
- Electron Spin Resonance Investigations of Rapid Thermal Oxidized Porous SiliconMRS Proceedings, 1992
- Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafersApplied Physics Letters, 1990